Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison

This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC 6H-SiC. The time evolution of basic macrovariables: “electron drift velocity” “non-equilibrium temperature” are obtained theoretically by using Non-Equilibrium Quantum Kinetic Theory, derived from method Nonequilibrium Statistical Operator (NSO). dependence intensity orientation applied electric field this macrovariables mobility analyzed. From results paper, most attractive these semiconductors for applications requiring greater electronic is polytype with perpendicular to c-axis.